1/9 july 2001 STB8NS25 n-channel 250v - 0.38 w - 8a d 2 pak mesh overlay? mosfet (1) i sd 8a, di/dt 300 a/ m s, v dd v (br)dss , tj t jmax (*)limited only by maximum temperature allowed internal schematic diagram n typical r ds (on) = 0.38 w n extremely high dv/dt capability n 100% avalanche tested description using the latest high voltage mesh overlay ? process, stmicroelectronics has designed an ad- vanced family of power mosfets with outstanding performance. the new patented strip layout cou- pled with the companys proprietary edge termina- tion structure, makes it suitable in coverters for lighting applications. applications n high current, high speed switching n swith mode power supplies (smps) n dc-dc converters for telecom, industrial, and lighting equipment absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d STB8NS25 250 v < 0.45 w 8 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 250 v v dgr drain-gate voltage (r gs = 20 k w ) 250 v v gs gate- source voltage 20 v i d (*) drain current (continuos) at t c = 25c 8a i d drain current (continuos) at t c = 100c 5a i dm ( l ) drain current (pulsed) 32 a p tot total dissipation at t c = 25c 80 w derating factor 0.64 w/c dv/dt (1) peak diode recovery voltage slope 5 v/ns t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c d 2 pak 1 3 www.datasheet.in
STB8NS25 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 1.56 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 8a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 300 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 250 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 4 a 0.38 0.45 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =4a 78 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 770 pf c oss output capacitance 118 pf c rss reverse transfer capacitance 48 pf www.datasheet.in
3/9 STB8NS25 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 125 v, i d = 4 a r g = 4.7 w v gs = 10 v (see test circuit, figure 3) 13 ns t r rise time 18 ns q g total gate charge v dd = 200v, i d = 8 a, v gs = 10v 37 51.8 nc q gs gate-source charge 5.2 nc q gd gate-drain charge 14.8 nc symbol parameter test conditions min. typ. max. unit t d(voff) t f turn-off- delay time fall time v dd = 125v, i d = 4 a, r g =4.7 w, v gs = 10v (see test circuit, figure 3) 51 16 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp = 200v, i d = 8 a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 12.5 12.5 28 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 8 a i sdm (2) source-drain current (pulsed) 32 a v sd (1) forward on voltage i sd = 8 a, v gs = 0 1.7 v t rr reverse recovery time i sd = 8 a, di/dt = 100a/s v dd = 30v, t j = 150c (see test circuit, figure 5) 198 ns q rr reverse recovery charge 1.1 m c i rrm reverse recovery current 11.3 a safe operating area thermal impedence www.datasheet.in
STB8NS25 4/9 static drain-source on resistance transconductance output characteristics transfer characteristics gate charge vs gate-source voltage capacitance variations www.datasheet.in
5/9 STB8NS25 source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp. www.datasheet.in
STB8NS25 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load www.datasheet.in
7/9 STB8NS25 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o8o d 2 pak mechanical data 3 www.datasheet.in
STB8NS25 8/9 tape and reel shipment (suffix t4)* dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data www.datasheet.in
9/9 STB8NS25 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroel ectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com www.datasheet.in
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